国家/地区 日本（3） 世界知识产权组织（3）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/26（4）
发明人 MATSUMOTO T（2） WADA M（2）
公开年 2022（4）
申请年 2021（2） 
专利权人 TOKYO ELECTR.（3）

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Manufacturing metal-carbon composite useful for high thermal conductivity heat dissipation material, comprises synthesizing carbon material on porous catalyst surface, complexing metal and controlling porosity of metal-carbon composite.

LEE S H, HAJUNSEOK, RHO H K, RYU H S