国家/地区 台湾（54）
IPC部 C（54）
IPC大类 C01（54） H01（28） B82（11）
C23（9） C08（8） C09（6）
H05（5） C30（4） B01（3）
C07（3） A61（2） B29（2）
B32（2） B33（2） C25（2）
IPC小类 C01B（54）
IPC C01B032/182（20） C01B032/194（14） C01B032/184（9）
B82Y040/00（8） B82Y030/00（7） C01B032/186（7）
H01L021/02（7） C01B032/19（6） C23C016/26（6）
H01L021/768（6） H01L023/532（6） H01L029/16（6）
H01M004/62（6） C08K003/04（5） C01B032/174（4）
发明人 HE M（4） HUANG H（4） DIXON S（3）
FAN S（3） GUINEY I（3） HUANG C（3）
HUANG J（3） HYUN L J（3） IMSUNGWOO（3）
JEON Y M（3） JIN N（3） JIN Y（3）
LEE H S（3） LI Q（3） LIM J（3）
公开年 2022（54）
申请年 2021（38）  2022（12）  2020（4） 
专利权人 TAIWAN SEMIC.（5） CTRON ADVANC.（4） DAEJOO ELECT.（3） HON HAI PREC.（3）
PARAGRAF LTD（3） UNIV CHUNG Y.（3） UNIV TSINGHU.（3） APPLIED MATE.（2）
EVONIK OPERA.（2） UNIV NAT TAI.（2）

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Photothermal conversion material used in photothermal conversion material complex for sewage treatment or seawater desalination, has composite including ultraviolet light and infrared light absorbing material is selected from group consisting of tungsten oxide, titanium oxide, copper sulfide.

ASTER A T, NASEEM S, WU C, TESSEMA A A

Preparing optionally substituted monocyclic aromatic hydrocarbons from optionally substituted furan, comprises contacting organic phase containing optionally substituted furan and ethylene with molecular sieve catalyst.

YANG W, LI X, WANG Z, FENG X, HAN X, XU R, LIU C, YUAN Z, QIAO J

Preparation of graphene dispersion used for preparing graphene composite film, involves mixing graphene and inducer comprising sodium silicate solution, and ultrasonically oscillating obtained dispersion.

HUNG W S, HUANG C H, SHI M

Heat dissipation structure for electronic device e.g. mobile phone, has heat dissipation module whose side protrudes from top surface of heat generating element, and does not contact with surface of carrier.

HE M, HUANG H, HUANG C

Carbon-based material post-modification reactor, has feeding port located at a point upstream from reactor and adapted to feed carbon-based raw material into reactor, discharging port located at point downstream from reactor, screw conveying device disposed in reactor.

KU T, HSIEH C, LI J, GU D, XIE Z, LI Z

Graphene flake for regulating zero-point potential energy, has multi-component material surface charge modulation layer that is combined on surface of target object to modulate mesopotential of target surface.

CHANG C, TSENG I, SU Y

Manufacturing method of three-dimensional wrinkled graphene, involves spraying graphene solution from top into reaction element, and making gas temperature in reaction element not greater than freezing point of solvent of graphene solution.

CHEN C, LIU Y P

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J