国家/地区 中国（4）
IPC部 C（5） H（2）
IPC大类 C30（5） C23（2） H01（2）
IPC小类 C30B（5）
IPC C30B025/16（5）
发明人
公开年 2022（5）
申请年 2021（5）
专利权人

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Epitaxially growing uniform graphene more than six inches on silicon carbide substrate, comprises grinding, polishing, and cleaning silicon surface of silicon carbide wafer, vacuumizing high-temperature furnace chamber, heating, feeding argon gas and naturally cooling to room temperature.

GUO F, LI X, XU X, SHAO C, CHEN X

Graphite substrate useful for manufacturing light emitting diode epitaxial wafer in semiconductor field, comprises graphite disc and multiple annular isolation layer, where surface of graphite disc is provided with multiple grooves for containing epitaxial wafer.

LI P, LU X, XIAO Y, GUO B, DING T, GE Y

Preparing transferable large size gallium oxide film involves growing graphene on the copper foil substrate, and then removing copper foil substrate, removing graphene of the copper foil substrate transferred to cleaned sapphire substrate.

HAO Y, MA P, JIAO P, WANG D, ZHANG J, FENG Q, ZHANG Y, NING J