国家/地区 中国（5）
IPC部 C（5）
IPC大类 C25（3） C09（2） C23（2）
H05（2）
IPC小类 C25D（3） C23C（2） H05K（2）
IPC C25D005/54（3） C23C016/26（2） C25D007/00（2）
发明人 MA Y（5）
公开年 2023（5）
申请年 2021（5）
专利权人 CHINESE ACAD.（3）

Forming substrate in substrate hole used in plating technology involves pre-processing surface of insulating base material and hole structure, coating graphene dispersion, applying different rotation radius and different rotating speeds to insulating base and plating material with conductive layer.

XIANG Q, YE G, CAO X, ZHANG J, LU J, MA Y, ZHENG K

Strengthening interfacial bonding force of metal and insulating substrate, comprises e.g. pretreating surface and/or pore structure of insulating substrate, coating prepared graphene dispersion liquid on surface and/or pore structure of charge-adjusted insulating substrate, and drying.

CAO X, YE G, LU J, ZHANG J, MA Y, ZHENG K

Graphene/metal composite layer structure useful in item in electroplating process, preferably used for flexible circuit board, comprises interpenetrating network formed by interlocking electroplated metal and graphene surfaces.

YE G, CAO X, ZHANG J, ZHENG K, LU J, MA Y

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y

Preparing copper rare earth graphene electrical contact material comprises e.g. mixing copper rare earth alloy powder and silicon powder to obtain mixed powder, carrying out chemical vapor deposition, separating silicon powder in mixed powder, sintering, extruding and drawing preform.

CAO H, MA Y