国家/地区 中国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC
发明人 LIU Y（4）
公开年 2023（4）
申请年 2023（4）
专利权人

Ferroelectric field effect transistor gas sensor, comprises gate on substrate, and pulse gate voltage applied to gate to regulate polarization direction and strength of ferroelectric dielectric layer, thus realizing regulation of initial state of gas sensitive layer and gas desorption speed.

WANG Y, LIU Y, GUAN K, FENG S, WANG X, LIU L, ZHANG T

Gallium oxide X-ray synaptic device for use in medical health field, has patterned electrode set on surface of gallium oxide light absorbing layer for collecting photo-generated carrier and outputting electric signal.

LONG S, ZHANG Z, YU S, LIU Y, HOU X

High precision thin film resistor device useful for analog integrated circuits, comprises device layer and isolation layer arranged on substrate, isolation trench formed through isolation layer and internally provided with heat conducting composite structure heat conducted with radiating hole.

LIU S, DUAN H, YIN J, YANG C, LIU X, LIU Y

High speed three-dimensional stacked image sensor used in e.g. military field, has square wave shaping circuit and digital frequency meter time-to-digital converter, which are used for filtering, shaping, and quantizing pulse signal from Monte memristor.

LIU Y