国家/地区 中国（5）
IPC部 B（5）
IPC大类 C23（5） C01（4） B01（2）
B82（2）
IPC小类 C23C（5） C01B（4） B82Y（2）
IPC C23C016/26（5）
发明人
公开年 2013（2） 2014（2）
申请年 2013（5）
专利权人

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Impure gas adsorption device useful for graphene chemical vapor deposition apparatus, comprises air flow channel, mixed gas inlet connected with one end of flow channel, multiple semiconductor refrigeration sheets and purified gas outlet.

LIU C, LIAN R