国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5） C01（3） H01（3）
B82（2）
IPC小类 C23C（5） C01B（3） H01L（3）
B82Y（2）
IPC C23C016/44（5）
发明人
公开年 2011（5）
申请年 2010（4） 
专利权人

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Method of growing graphene directly on substrate involves placing substrate material into plasma-enriched chemical vapor phase deposition cavity, vacuumizing, heating substrate, and supplying carbureted hydrogen gas and other inert gas.

SHI D, ZHANG G, ZHANG L

Method for depositing high dielectric constant material on graphene surface atomic layer in manufacture of integrated circuit, involves applying electric field to cavity in which silicon substrate with graphene is placed.

WANG P, ZHANG W, JIANG T, SUN Q

Graphene preparation involves putting substrate in closed cavity cooled by circulating water, where carrier gas is ventilated and substrate is heated.

LIU Y, HUANG L, WANG T, JI L, CHANG Q, GUO G

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V