国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/186（3） C23C016/26（3） C23C016/56（2）
发明人 TAN H（5）
公开年 2022（3）
申请年 2022（3） 
专利权人 CHANGZHOU SI.（3） JIANGSU JIAN.（2） WUXI GRAPHEN.（2）

Segmented roll-to-roll chemical vapor deposition graphene continuous growth device, has exhaust pipe whose end is provided with vacuum pump, and unwinding cabin and reeling cabin whose ends are wound on unreeling drum and winding drum.

PAN D, QU Y, TAN H, WANG W, SHEN D

Preparing graphene film, comprises moving growth substrate in reaction chamber at predetermined speed under action of conveying mechanism along with supporting structure until reaction chamber is conveyed out.

GUO B, QU Y, TAN H, SHEN D, WANG W

Method for preparing graphene metal composite material useful in field of alloy preparation for electrical, mechanical, and thermodynamic applications, comprises e.g. growing graphene on surface of metal material, heating, and applying pressure to metal material grown with graphene.

QU Y, TAN H, WANG W, SHEN D

Device used e.g. for etching continuous substrate and graphene comprises feeding and etching device.

ZHANG H, LI T, TAN H

Transfer method of graphene film involves depositing graphene thin film on metal substrate by chemical vapor deposition method, bonding transfer substrate using heat-peelable adhesive, and etching metal substrate.

YANG J, LI H, TAN H, WANG W, QIU Y