国家/地区 中国（4）
IPC部 C（4） H（2）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B025/18（3） C30B029/40（2） H01L021/02（2）
发明人 WANG Y（4）
公开年 2022（4）
申请年 2021（3） 
专利权人

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R

Method for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate, and cooling ferroelectric material substrate.

XU K, WANG J, WANG Y, XU Y, QU Y

Etching method of single-sided germanium wafer by coating photoresist on front, back and circumferential directions of germanium wafer respectively to form photoresist film, exposing photoresist film on front side, and developing.

HE Y, CHEN M, WANG Y

Preparing indium-phosphate thin film based on gallium-arsenic substrate, comprises e.g. growing gallium-arsenic buffer layer on gallium-arsenic substrate, preparing composite buffer layer on gallium-arsenic buffer layer, forming composite buffer layer and growing indium-phosphate thin film.

JI H, LUO S, WANG Y, XU P