国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人 MA C（5）
公开年 2022（2）
申请年 2021（2） 
专利权人 INST METAL R.（4）

Preparing a high-performance thermal interface material by using mold to squeeze three-dimensional porous metal, heating, performing catalytic growth of graphene on the surface of a porous metal substrate and using vacuum impregnation process to fill polymer substrate in the porous graphene pores.

CHENG H, LIU H, MA C, REN W

Method for preparing graphene film, involves obtaining three-dimensional connected graphene framework structure with high density, obtaining three-dimensional graphene porous, and pressing obtained three-dimensional graphene porous to form graphene film.

CHENG H, LIU H, MA C, REN W

Use of graphene film as high temperature resistant thermal interface material or heat dissipation film material.

CHENG H, LIU H, MA C, REN W

Preparation of graphene powder used as filler, involves adding metal salt to cavity, introducing mixed atmosphere of e.g. carbon source gas into cavity, subjecting to reduction reaction and growing graphene on reduced metal salt substrate.

REN W, MA C, CHENG H

Preparing large area high quality graphene film with uniform number of layer comprises e.g. using 2-naphthol as solid carbon source, and preparing graphene film by magnetron sputtering technique and chemical vapor deposition technique.

ZHANG Z, MA C, CHEN C, ZHAO W, YAN J, YUAN J, ZHAI C, WANG X, WANG Y, LI Z, WU M