国家/地区 中国（8）
IPC部 C（8）
IPC大类 C30（8） C01（4） H01（4）
B32（2） B82（2）
IPC小类 C30B（8）
IPC C30B001/10（8）
发明人
公开年 2012（2） 2022（2） 2023（2）
申请年 2014（2）  2021（2）  2022（2） 
专利权人

Preparing single crystal high-nickel cobalt-free material comprises e.g. mixing single crystal high-nickel cobalt-free precursor with lithium source, carrying out calcination, and mixing second single crystal high nickel cobalt free calcined material with graphene oxide solution.

LI C, YU H, XIE Y, LI A

Method for preparing micro-nano materials comprise e.g. introducing sacrificial carrier into slurry containing raw materials and auxiliary agents, shaping and drying to form mixture, synthesizing preform to prepare porous body made of micro-nano materials, and performing dispersion operation.

LI Q

Preparation method of high-pressure single crystal lithium vanadium fluorophosphate positive electrode material used in field of lithium ion battery, involves mixing vanadium phosphate with lithium fluoride, supplementary fluorine source, flux, carbon source, and ball-milling dispersant.

SONG M, WEI J, DU N

Preparing high purity single crystal graphene in large scale, involves preparing silk fibroin solution, dropping on quartz sheet, spin coating, drying, placing quartz sheet and high molecular carbon-containing organic film in reaction cavity, processing, calcining, naturally cooling and taking out.

ZHANG Y, ZHENG P, ZHENG L, CHEN W, ZHENG H

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Preparing silicon carbide nanowhisker comprises uniformly mixing graphene and silicon powder, raising the mixture, sintering the mixture, cooling the sintered mixture and then calcining, and soaking calcined product in hydrofluoric acid.

KONG Q, LI X, CHEN C, LIU Z, CAI R

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Method for preparing regular graphene single-crystal domain utilized for graphene apparatus, involves forming aromatic compound as regular graphene single-crystal domain on metal surface by molecule self-assembly technology.

CHEN X, LIU L, LIU S, WANG L