国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B029/08（4）
发明人
公开年 2022（4）
申请年 2021（2）  2022（2） 
专利权人 BEIJING TONG.（2）

Preparing growth graphene of doped germanium single crystal involves using horizontal gradient condensation method to synthesize germanium, cutting polycrystalline germanium, cutting polycrystalline germanium, crucible, quartz tube, quartz cap for cleaning, then processing dry, putting seed crystal.

LI Z

Etching method of single-sided germanium wafer by coating photoresist on front, back and circumferential directions of germanium wafer respectively to form photoresist film, exposing photoresist film on front side, and developing.

HE Y, CHEN M, WANG Y

Graphite substrate useful for manufacturing light emitting diode epitaxial wafer in semiconductor field, comprises graphite disc and multiple annular isolation layer, where surface of graphite disc is provided with multiple grooves for containing epitaxial wafer.

LI P, LU X, XIAO Y, GUO B, DING T, GE Y

Preparing one-dimensional single crystal germanium-based graphene plasmon nanostructure in e.g. mid-infrared sensing, comprises sputtering gold nano-film on substrate, and growing high crystallinity graphene shell layer on surface of germanium doped single crystal nano-wire.

WANG H, GU Y, CHANG K, CHEN K