国家/地区 中国（5）
IPC部 C（5）
IPC大类 C30（5） H01（2）
IPC小类 C30B（5）
IPC C30B025/02（5）
发明人 CHAI Z（3） HAN D（3） HAO Y（3）
NING J（3） WANG D（3） YAN Y（3）
ZHANG J（3）
公开年 2014（4）
申请年 2013（5）
专利权人 UNIV XIDIAN（3）

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing silicon carbide substrate in metal organic chemical vapor deposition reactor and adding ammonia.

HAO Y, NING J, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y

Epitaxial growth method of graphene thin film used for manufacturing graphene device, involves providing substrate into reaction chamber, introducing hydrogen, providing copper, processing, then introducing hydrogen and annealing.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Metal organic chemical vapor deposition reaction chamber, useful for growing graphene, comprises heating device fixed on bracket, and source inlet and exhaust port that are located at top plate and supporting plate, respectively.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Preparation of single crystal graphene involves adhering graphene to silicon/silicon dioxide composite layer and then transferring to substrate, providing substrate into reaction chamber and supplying carbon source gas and reducing gas.

LIN S, LI X