国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5）
IPC C23C014/24（2） C23C016/26（2） C23C016/54（2）
C30B025/00（2） C30B029/02（2） C30B029/64（2）
发明人
公开年 2018（5）
申请年 2017（3）  2018（2） 
专利权人 UNIV PEKING（2）

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Preparing cadmium zinc telluride film (CdZnTe) by directional growth on a graphene substrate comprises washing copper foil, placing in CVD growth chamber, heating, cooling, polishing, annealing, and immersing.

HUANG J, GU Q, ZHOU X, YANG F, ZOU T, TANG K, HUANG H, WANG L

Preparing two-dimensional crystalline thin film layer of palladium diselenide involves using silicon carbide as substrate having graphene layer on surface of silicon carbide and maintaining temperature of substrate to growth temperature.

LI E, WANG D, FAN P, WANG Y, GAO H

Graphene growth device with high temperature process chamber, has high temperature process chamber and receiving cooling chamber guide roller that are finally wound onto graphene substrate receiving roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y