国家/地区 中国（4）
IPC部 B（2） C（2） H（2）
IPC大类 B82（2） C01（2） H01（2）
IPC小类 B82Y（2） C01B（2） H01L（2）
IPC B82Y040/00（2）
发明人 DING L（4）
公开年 2022（4）
申请年 2022（4） 
专利权人 UNIV SHAANXI SCI TECHNOLOGY（4）

Preparing silicon carbide (SiC) nanowire array by magnetic field induction method, involves preparing layer of tin metal catalyst on substrate, plating layer of metal nickel (Ni) on surface of SiC nanowire with uniform size distribution to obtain Ni-SiC core-shell structure.

ZENG J, TANG Y, SU Y, WEI G, GUO Y, DING L

Silicon carbide nanowire core-shell heterojunction material comprises core body and shell layer, where shell layer is uniformly coated on core body.

WEI G, LOU R, DING L, DI P, SU Y

Preparation of graphene array, by coating boron trioxide on surface of silicon carbide foam, annealing to obtain substrate, pyrolyzing epitaxial graphene on substrate, subjecting to physical gas phase transmission treatment, and peeling off surface of foam with graphene array on surface.

WEI G, LI L, SU Y, ZENG J, DING L

Film based on black phosphorus-graphene oxide quantum dot, comprises upper layer structure, middle layer structure and lower layer structure sequentially connected together, where material of upper layer structure and lower layer structure is graphene oxide nano sheet.

DING L, SU Y, YUAN S, WEI G