国家/地区 中国（5）
IPC部 H（5） B（3）
IPC大类 H01（5） B82（2）
IPC小类 H01L（4） B82Y（2）
IPC H01L051/05（4） H01L021/336（3） H01L029/16（3）
H01L029/66（3） H01L029/78（3） H01L029/786（3）
H01L051/30（3） B82Y010/00（2） H01L021/04（2）
H01L021/28（2） H01L021/316（2） H01L021/768（2）
H01L027/12（2） H01L029/06（2） H01L051/40（2）
发明人 LIN Y（2） LIN Y M（2）
公开年 2011（4）
申请年 2010（3） 
专利权人 IBM UK LTD（5）

Battery includes an anode, an electrolyte comprising a solvent and at least one ion conducting salt and a cathode comprising a metal halide salt incorporated into an electrically conductive material.

KIM J, NA Y, ALLEN R, ALLEN R D, LUO Y

FET formation by depositing channel material comprising graphene or nanostructure on substrate, depositing contact material over channel material, gate, and spacers, and patterning contact material to form self-aligned contact for FET.

CHANG J, LAUER I, SLEIGHT J, CHANG J B

Semiconductor device has complementary metal oxide semiconductor device layer that is in contact with source and drain, and gate are that connected to graphene channel respectively.

CHEN K, LIN Y, AVOURIS P, FARMER D B, FARMER D, CHEN K N, LIN Y M, KUANNENG C, YUMING L

Graphene FET comprises a gate stack including a seed layer, a gate oxide formed over the seed layer and a gate metal formed over the gate oxide, an insulating layer, a graphene sheet, a spacer, and a source contact and a drain contact.

LIN Y, JENKINS K A, VALDES GARCIA A, VALDESGARCIA A, GARCIA A V, VALDES G A, LIN Y M

Electrically activating a structure having graphene layers formed on a silicon carbide layer comprises subjecting the structure to an oxidation process.

MCFEELY F R, YURKAS J J, OIDA S, HANNON J B