国家/地区 欧洲专利局（EPO）（4）
IPC部 C（4）
IPC大类 C23（4） C01（3） H01（3）
IPC小类 C23C（4） C01B（3） H01L（3）
IPC C23C016/26（4）
发明人
公开年 2020（2） 2021（2）
申请年 2019（4）
专利权人

Depositing layer of carbon nanostructures on substrate by providing substrate in processing chamber, providing processing gas in processing chamber having carbon monoxide gas and creating and sustaining gaseous plasma in processing chamber.

ZAPLOTNIK R, MOZETIC M, PRIMC G, VESEL A, HORI M, ODA O

Deposition of two-dimensional layer on substrate, involves feeding process gas through supply line into gas distribution chamber(s) of gas inlet containing gas outlet openings which open into process chamber, and heating substrate.

TEO K B K, MCALEESE C, CONRAN B R, MACALIZ C

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X