国家/地区 欧洲专利局（EPO）（4）
IPC部 B（4） C（4） H（3）
IPC大类 C01（4）
IPC小类 C01B（4） C23C（4） B05D（3）
B82Y（3） H01L（3） B01J（2）
IPC C23C016/56（4）
发明人 ZENASNI A（2）
公开年 2010（2）
申请年
专利权人 COMMISSARIAT.（2）

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Synthesizing graphene sheet on platinum silicide, by forming stack by e.g. placing first layer of diffusion barrier material on substrate and placing second layer of silicon carbonaceous material on first layer and thermally treating stack.

ZENASNI A

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C