国家/地区 英国（7）
IPC部 B（5） H（5） C（4）
IPC大类 H01（5） B82（4） C01（4）
IPC小类 H01L（5） B82Y（4） C01B（4）
IPC C01B031/04（4） B82Y040/00（3） H01L021/336（3）
H01L029/15（3） H01L029/16（3） H01L029/66（3）
H01L029/775（3） H01L029/78（3） H01L029/786（3）
B82Y010/00（2） B82Y030/00（2） H01L021/00（2）
H01L021/04（2） H01L051/00（2） H01L051/05（2）
发明人 DIMITRAKOPOULOS C（2）
公开年 2012（5） 2011（2）
申请年 2011（7）
专利权人 INT BUSINESS.（5）

Semiconductor structure e.g. dual-channel finFET, has graphene nanoribbon located on bare sidewall of silicon carbide fin, where portion of graphene nanoribbon overlapped by gate structure defines channel region of structure.

COHEN G M, DIMITRAKOPOULOS C D, GRILL A, COHEN G, DIMITRAKOPOULOS C

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Producing intercalating, expanded, and/or exfoliated graphite or graphene species comprises electrolysis utilizing electrode materials comprising graphite, where graphite layers are oriented to plane of a surface of the electrode.

STIRLING C

Graphene based tunable band gap bi-bond layered electronic device e.g. N-type FET, for fabricating integrated circuit, has local gates formed as pair to locally control portion of bilayer graphene layer.

CHEN Z, FRANKLIN A D, HAN S

Increasing conductivity of a graphene film, comprises exposing the graphene sheets to a solution comprising a one-electron oxidant configured to dope the graphene sheets.

BOL A A, AFZALIARDAKANI A, TULEVSKI G S, AFZALIARDAKANI A

Non-transition metal catalyst, useful in oxidation, hydration, dehydrogenation, condensation, polymerization or auto-tandem oxidation-hydration-condensation reactions, comprises catalytically-active graphene oxide or graphite oxide.

BIELAWSKI C W, DREYER D R, JIA H, BIELAWSKI C, DREYER D

Semiconductor device has complementary metal oxide semiconductor device layer that is in contact with source and drain, and gate are that connected to graphene channel respectively.

CHEN K, LIN Y, AVOURIS P, FARMER D B, FARMER D, CHEN K N, LIN Y M, KUANNENG C, YUMING L