国家/地区 英国（8）
IPC部 H（5） C（4） B（3）
IPC大类 H01（5） B82（3） C01（3）
IPC小类 H01L（5） B82Y（3） C01B（3）
IPC C01B031/04（3） H01L021/336（3） H01L029/16（3）
H01L029/78（3） H01L029/786（3） H01L051/00（3）
B82Y030/00（2） B82Y040/00（2） H01L029/15（2）
H01L029/66（2） H01L029/775（2）
发明人 DIMITRAKOPOULOS C（2）
公开年 2012（8）
申请年 2011（5）  2010（2） 
专利权人 INT BUSINESS.（5）

Semiconductor structure e.g. dual-channel finFET, has graphene nanoribbon located on bare sidewall of silicon carbide fin, where portion of graphene nanoribbon overlapped by gate structure defines channel region of structure.

COHEN G M, DIMITRAKOPOULOS C D, GRILL A, COHEN G, DIMITRAKOPOULOS C

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Fluid useful for improving a property of a fluid e.g. flow assurance properties of the fluid comprises base fluid selected from oil-based fluid or water-based fluid; and graphene nanoparticles.

MONTEIRO O, QUINTERO L

Producing intercalating, expanded, and/or exfoliated graphite or graphene species comprises electrolysis utilizing electrode materials comprising graphite, where graphite layers are oriented to plane of a surface of the electrode.

STIRLING C

Graphene based tunable band gap bi-bond layered electronic device e.g. N-type FET, for fabricating integrated circuit, has local gates formed as pair to locally control portion of bilayer graphene layer.

CHEN Z, FRANKLIN A D, HAN S

Electronic device e.g. biosensor used in biomedical applications, has source/drain electrodes which angled to gate electrodes so that graphene element is addressed individually by selection of gate electrode and source/drain electrode.

PAN G

Graphene-based field effect transistor for high-frequency electronics, comprises graphene layer located on insulating layer, first and second metal portions, first and second electrodes, gate dielectric layer, and dielectric seed layer.

AVOURIS P, FARMER D B, LIN Y, ZHU Y, LIN Y M

Increasing conductivity of a graphene film, comprises exposing the graphene sheets to a solution comprising a one-electron oxidant configured to dope the graphene sheets.

BOL A A, AFZALIARDAKANI A, TULEVSKI G S, AFZALIARDAKANI A