国家/地区 日本（17）
IPC部 C（17）
IPC大类 C01（17） H01（9） B82（5）
B01（3） C08（2） C09（2）
C23（2） H05（2）
IPC小类 C01B（17）
IPC C01B032/194（7） B82Y040/00（5） B82Y030/00（4）
C01B032/198（4） H01M004/62（4） C01B032/15（3）
C01B032/19（3） H01M004/36（3） B01J021/18（2）
C01B013/02（2） C01B032/182（2） C01B032/184（2）
C01B032/186（2） C01B032/192（2） H01L029/786（2）
发明人 HASEGAWA T（2） KARIYADO H（2） KOBAYASHI H（2）
公开年 2019（17）
申请年 2018（13）  2019（4） 
专利权人 DAICEL CORP（2） KOBAYASHI H（2） TDK CORP（2）

Manufacture of graphene heat-generation sheet for e.g. film, involves reacting graphene-nano titania precursor solution with tetrafluoroethylene, dispersing obtained composite in resin solution and joining obtained paste to base material.

WU X T, YU H J

Repairing defects of graphene comprises subjecting composite fluid having reactive compound and supercritical fluid to impregnate graphene powder with in reactor containing graphene powder and separating fluid and powder, and adsorbing.

LI Z, TU P, CHEN C, HUANG Y, LI Z Y, TU P M, CHEN C J, HUANG Y W

Carbon material used for electrode material for battery, and electrically conductive additive, comprises graphene structure, and nitrogen dope nanocarbon which covers component(s) of surface of carbon material.

SAITO N, SAI S, HASHIMI K, TORAZAWA K, HASHIMOTO T, YANA T, BRATESCU M A

Manufacture of graphene junction with each of thickness, surface area and shape is freely changed by dispersing metal compound i.e. nickel, iron and cobalt deposited by thermal decomposition in alcohol, mixing with graphene, and fluctuating.

KOBAYASHI H

Extracting individual graphene from a collection of graphene involves dissolving an organic compound in methanol to obtain solution, preparing suspension, separating graphene cluster into individual graphenes, and evaporating methanol.

KOBAYASHI H

Producing oxygen gas, involves heating composite of iron oxide particles and graphene oxide.

HASHIMOTO H, ISOBE K, SERA Y, KISHI H, SAKAMOTO T, YOSHIMOTO K

Graphene-containing structure used for e.g. semiconductor device, comprises silicon carbide semiconductor layer, graphene layer on semiconductor layer, and aluminum nitride layer provided between semiconductor layer and graphene layer.

WU P T, YOSHIDA M, KIMURA S, MIYAZAKI H, YAMAZAKI Y

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Positive electrode for lithium-ion secondary battery, comprises layer comprising graphene or multilayer graphene, and active material of lithium-nickel-cobalt-manganese composite oxide comprising particle group adhered to graphene surface.

KARIYADO H, HASEGAWA T

Positive electrode for lithium ion secondary battery, comprises layer comprising active material, (multilayer) graphene, and vanadium-containing compound whose at least one portion is adhered to surface of (multilayer) graphene.

KARIYADO H, HASEGAWA T