国家/地区 韩国（6）
IPC部 B（6）
IPC大类 B01（6）
IPC小类 B01J（6） C01B（6） C23C（6）
B82Y（2） H01B（2） H01L（2）
IPC B01J019/08（6）
发明人 CHOI I S（3） LEE K J（3） CHOI I（2）
CHOI S Y（2） HONG B H（2） LEE K（2）
WON D K（2）
公开年 2012（6）
申请年 2011（3）  2010（2） 
专利权人 KOREA ADV IN.（3） HANWHA TECHW.（2） SAMSUNG TECH.（2）

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Manufacturing method of graphene, involves growing graphene on surfaces of floating sample in air.

JOO I L, CHAN Y H, KWONJAE Y, JUNG H K, YONG S Y, YONG H S, GEUN W L

Method for improving graphene property involves irradiating laser beam on graphene grown on substrate, and heat treating.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H