国家/地区 韩国（8）
IPC部 C（8）
IPC大类 C01（8） B01（3） B32（2）
C23（2） H01（2）
IPC小类 C01B（8）
IPC C01B031/04（5） B01D069/10（2） B01D069/12（2）
B01D071/02（2） B01D071/06（2） B32B009/00（2）
H01L029/16（2）
发明人 KIM H（8）
公开年 2016（4） 2015（3）
申请年 2015（8）
专利权人 SAMSUNG ELEC.（3） UNIV HANYANG.（2） UNIV HANYANG.（2）

Porous nanostructure used for e.g. hydrogen storage material and vibration absorber, comprises graphene layer comprising laminated graphene and having pores formed on surface or inside, and metal particles embedded in graphene filler.

JUNG J, KIM H, OH I, OH J, JUNG J H, KIM H J, OH J H

Producing graphene involves preparing impregnating expanded graphite in boron or nitrogen having expanded graphite to form graphite layer.

HAN J H, KIM H, KIM K K, CHUNG C Y

Manufacture of three-dimensional graphene used for manufacturing of reduced graphene, involves providing core-shell composite in which core is surrounded by graphene or graphene derivative as shell material, and etching.

GON S J, LEE S S, JANG Y L, KIM H, JONG H P, BAE W K

Graphene structure has graphene layer which is provided on substrate, and is included with several convex portions of hollow structure.

KU J, KO W, KIM H, KU J Y, KO W H, KIM H W

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Composite film, has oxide graphene coating layer whose contact angle is maintained on porous polymer supporter at specific degrees, where width of oxide graphene coating layer is in specific range.

PARK H B, KIM H W, CHO Y, YOO B M, HWANG Y S, HO B P, HWANG Y, KIM H, PARK H, YOO B, ZHAO Y

Graphene oxide nano-composite membrane for gas separation, has graphene oxide coating layer formed with nano-porous carbon and mounted on supporter, where thickness of graphene oxide coating layer is in specific range.

PARK H B, KIM H W, YOO M J, YOO B M, AHN B, HO B P, KIM H, PARK H, YOO B, YOO M, BUM P H

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H