国家/地区 韩国（45）
IPC部 C（45）
IPC大类 C01（45）
IPC小类 C01B（45）
IPC C01B031/02（44） C23C016/26（32） B82Y040/00（18）
H01B001/04（15） B82Y030/00（14） C01B031/04（12）
B01J019/08（6） B05D005/12（4） B32B009/00（4）
B82B003/00（4） C23C016/56（4） B32B003/00（3）
B32B033/00（3） C01B031/00（3） C01B032/186（3）
发明人 HONG B H（7） AHN J（4） AHN J H（4）
CHOI I S（4） LEE K J（4） YOO J B（4）
BAE S K（3） CHOI J Y（3） HONG B（3）
JUNG M H（3） LEE Y（3） SHIN H J（3）
WON D K（3） BAE S（2） CHO S（2）
公开年 2012（23） 2013（13） 2011（9）
申请年 2011（45）
专利权人 UNIV SUNGKYU.（7） UNIV SUNGKYU.（7） SAMSUNG ELEC.（6） KOREA ADV IN.（5）
SAMSUNG TECH.（5） HANWHA TECHW.（4） UNIV SUNGKYU.（4） GRAPHENE SQU.（3）
KOREA ADVANC.（3） KOREA ELECTR.（2） POSTECH ACAD.（2） SK INNOVATIO.（2）
UNIV KYUNGHE.（2） UNIV YONSEI .（2）

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Transferring graphene, comprises forming graphene on substrate of metal film, forming polymer transfer layer on graphene and then laminating to form first laminate, and removing laminate and then heat treating to form second laminate.

JAEKYU J, SEUNGMIN J, YOUNGKEUN L, HONG Y

Manufacturing graphene co-extruded film, comprises forming hexagonal boron nitride layer in upper side of substrate, forming metal catalytic layer, forming top graphene layer, and removing metal catalytic layer and top graphene layer.

KIM H K, YANG W S, GEUN K H, SEOK Y U

Apparatus for growing carbon nanostructure i.e. graphene, on fiber for current carbon nanotube synthesis technique, has substrate inlet sized before growth zones to allow spoolable length substrate to pass through growth zones.

MALECKI H C, DAHNE J L, LOEBACH J P, GAIGLER R L, LEDFORD J T, MALECKI H, DAHNE J, LOEBACH J, GAIGLER R, LEDFORD J

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Manufacturing method of graphene for transparency electrode plate used in semiconductor device, involves forming amorphous carbon thin film in top surface of catalyst metal layer, and cooling thin film for forming graphene layer.

KIM C S, KIM J K, KIM D G, KANG J W

Manufacture of graphene film for forming graphene, involves growing monocrystal metal layer on substrate, and forming graphene thin film on metal layer.

JOO S J, BAHNG W, CHA S I

Manufacture of transparency graphene sheet involves depositing catalyst metal particles on transparent substrate, and growing graphene on deposited transparent substrate.

CHO S M, KIM S W, SHIN D W, YOO J B

Manufacture of graphene for graphene laminate, involves preheating graphite catalyst, chemically polishing preheated graphite catalyst and obtaining graphene from chemically polished graphite catalyst.

CHOI J Y, HAN G H, LEE Y H, SHIN H J