国家/地区 日本（4）
IPC部 H（4） C（3）
IPC大类 H01（4） C01（3）
IPC小类 H01L（4） C01B（3）
IPC H01L029/06（4） C01B031/02（3） H01L029/16（3）
H01L029/786（3） C01B032/182（2） H01L021/02（2）
H01L021/28（2） H01L021/3205（2） H01L021/336（2）
H01L021/768（2） H01L023/532（2） H01L029/66（2）
H01L051/05（2） H01L051/30（2）
发明人 SATO S（3） YAMAGUCHI J（2）
公开年 2014（3）
申请年 2013（2）  2014（2） 
专利权人 FUJITSU LTD（4）

Electronic device e.g. graphene transistors, has nanocarbon material, electrodes connected to nanocarbon material, and lower layer and upper layer containing molecular material having doping function on nanocarbon material.

SATO S, YAMADA A, YAGI K, TAKAHASHI M

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Electronic apparatus e.g. transistor, has protective film consisting of transition metal oxide that is formed on graphene film which is formed on insulating substrate, and insulating layer formed on protective film with electrode.

YAMAGUCHI J