国家/地区 台湾（6）
IPC部 C（6） H（6） B（5）
IPC大类 C23（6）
IPC小类 H01L（6） C01B（5） C23C（5）
B82Y（4） H01B（3） B05D（2）
B32B（2） B82B（2） C30B（2）
IPC C01B031/04（5） B82Y030/00（4） C01B031/02（4）
B82Y040/00（3） H01L021/02（3） H01L021/20（3）
B82B003/00（2） C01B032/188（2） C23C014/06（2）
C23C014/48（2） C30B029/02（2） H01B001/04（2）
H01L031/04（2） H01L031/042（2）
发明人 VEERASAMY V（3） VEERASAMY V S（3）
公开年 2010（3） 2011（3）
申请年 2009（6）
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3）

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Solar cell comprises graphene-based conductive layer located on glass substrate, and another second graphene-based conductive layer in contact with semiconductor layer that is located in absorbing layer.

VEERASAMY V S, VEERASAMY V

Creating layers of graphene, comprises implanting carbon atoms into a substrate at first temperature and lowering temperature of the substrate, so that the carbon atoms diffuse from substrate.

RAMAPPA D A, SULLIVAN P, RAMAPPA D

Method for forming thin coating dielectric material on surface of carbon-based material e.g. graphene, involves forming ultra thin silicon nucleation layer of specific thickness on portion of surface of carbon-based material.

BABICH K, CALLEGARI A, CHEN Z, KIEWRA E, SUN Y

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J