国家/地区 日本（4）
IPC部 C（4） H（3）
IPC大类 C01（4） H01（3）
IPC小类 C01B（4） H01L（3）
IPC C01B031/02（4） H01L021/02（3） H01L021/336（3）
H01L029/16（3） H01L029/66（3） H01L029/786（3）
H01L051/05（3） H01L051/30（3） H01L051/40（3）
C01B031/04（2） C01B032/182（2） H01L021/04（2）
H01L021/28（2） H01L029/778（2）
发明人 SATO S（2）
公开年 2015（4）
申请年 2014（2）  2015（2） 
专利权人 FUJITSU LTD（4）

Electronic device e.g. tunnel transistor, comprises channel layer comprising graphene(s) with edge portions terminated with modifying groups different from each other bonded to each other, and electrodes formed on channel layer.

SATO S, JIPPO H, OHFUCHI M, OFUCHI M

Manufacturing method of graphene film, involves removing catalyst metal film in oxidation atmosphere of oxidizer and transferring graphene film to substrate.

KONDO D, NAKANO H, KONDO T, NAKANO M

Graphene film in which many ribbon-shaped graphenes having a longitudinal edge structure of an arm chair type constitute a network structure used for manufacturing electronic device and top gate top contact thin film transistor.

YAMAGUCHI J, SATO S

Manufacture of graphene film used for e.g. next-generation transistor, involves transferring graphene film with supporting film to graphene film on another substrate, and transferring laminated graphene films to another substrate.

HAYASHI K