国家/地区 美国（8）
IPC部 C（8）
IPC大类 C01（8） C23（8） B01（4）
H01（4） B82（2） C09（2）
C30（2）
IPC小类 C01B（8）
IPC C23C016/02（8）
发明人 LEE S J（2）
公开年 2016（8）
申请年 2016（5）  2015（3） 
专利权人 SAMSUNG ELEC.（2）

Growing graphene coating or carbon nanotubes on catalytic substrate involves performing chemical vapor deposition by exposing catalytic substrate to carbon containing gas.

CHOUBAK S, LEVESQUE P, GAGNON P, MARTEL R, DESJARDINS P

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Composite structure of graphene and carbon nanotube configured in a three-dimensional form used in electrodes, comprises graphene platelets, metal particles coated on graphene platelets, and carbon nanotubes formed on metal particles.

WU M Y, HSIEH C, PENG C, WU Y, XIE C, HSIEH C Y, PENG C S

Preparation of graphene-encapsulated metal nanoparticles used in e.g. LED, involves supplying preset mole ratio of gas comprising carbon dioxide, methane and water on metal catalyst and reacting and cooling resultant product.

SON I H, LEE S J

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S

Method for growing graphene nano-petals on carbon fiber, involves providing cloth base with fibers that are not fully carbon, and growing graphene petals integrally on carbonized cloth base using same plasma process.

FISHER T, XIONG G

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R