国家/地区 韩国（5）
IPC部 C（5）
IPC大类 C01（5） B01（3） G03（3）
H01（3） B82（2）
IPC小类 C01B（5）
IPC C01B032/184（5）
发明人 KIM H K（5）
公开年 2021（2）
申请年 2020（2） 
专利权人 KOREA ELECTR.（3）

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Preparing pellicle for extreme UV exposure with graphene defect healing layer, involves forming support layer of silicon nitride material on silicon substrate, and forming core layer of graphene material on support layer.

KIMHYUNGKEUN, MI K H, LEE W S, YANG H S, JOJINWOO, KIM B, JEONJUNHYUCK, LEE G H, KIM H Y, JEON J H, KIM S G, CHO J W, KIM H M, KIM H K

Directly growing multilayer graphene used in a pellicle for extreme ultraviolet lithography, involves forming small-layer graphene on SiN substrate, forming metal catalyst layer on small-layer graphene, and forming an amorphous carbon layer.

KIMHYUNGKEUN, MI K H, KIM H Y, LEE G H, SUNG K H, KIM H M, KIM S G, KIM H K

Negative active material for sodium secondary battery, comprises metal phosphate particles dispersed on graphene, and having ratio of number of metal phosphate particles having particle diameter and total number of metal phosphate particles.

KIM K B, ROH H K, KIM H K, KIM M S, NOH H K

Manufacture of graphene fiber used for e.g. coaxial cable, involves forming linear pattern on substrate having metal layer, reacting linear pattern having metal layer with reactive gas, and impregnating substrate with linear pattern.

BAE S K, HONG B H, KIM H K, KIM K S, HUI H B, SU K G, GEUN K H, GANG B S