国家/地区 美国（4）
IPC部 C（4）
IPC大类 C01（4） C23（4） H01（3）
IPC小类 C01B（4）
IPC C23C016/02（4）
发明人 SHIN H（3） BYUN K（2） BYUN K E（2）
KIM C（2） LEE C（2） LEE C S（2）
LEE E（2） SHIN H J（2） SHIN K（2）
SHIN K W（2） SONG H（2） SONG H J（2）
公开年 2020（4）
申请年 2020（2） 
专利权人 SAMSUNG ELEC.（3）

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Crystalline graphene used in display device, is obtained by performing thermal treatment involving supplying heat to inorganic substrate, introducing vapor carbon supply, and binding activated carbon to grow crystalline graphene.

SHIN H, CHOI J, WOO Y, YOON S

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J