国家/地区 美国（4）
IPC部 C（4）
IPC大类 C30（4） H01（4） B32（2）
B82（2）
IPC小类 C30B（4）
IPC H01L021/02（4）
发明人
公开年 2013（2）
申请年 2013（4）
专利权人

Preparation of semiconductor material used for forming semiconductor layer in semiconductor device, involves forming graphene layer on semiconductor, and forming and cleaving metal monolayer and epitaxial layer of gallium material.

BAYRAM C, DIMITRAKOPOULOS C D, FOGEL K E, KIM J, OTT J A, SADANA D K

Manufacture of graphene laminated structure used for electronic device, involves plasma-treating surface of hexagonal boron nitride sheet, depositing hexagonal boron nitride sheet on graphene sheet, and forming insulating layer.

KIM S, HAN S, HAN S A, KIM S W

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Formation of graphene film on surface of substrate for, e.g. lasers, involves locating carbon source at substrate surface, controlling ambient conditions to inhibit nucleation, and then initiating graphene nucleation at localized site.

DONG G