国家/地区 美国（7）
IPC部 B（7）
IPC大类 C01（7） C30（7） B82（4）
C23（3） H01（3） B01（2）
C09（2）
IPC小类 C01B（7）
IPC C30B029/02（6） C01B031/04（5） C01B032/182（4）
B82Y030/00（3） B82Y040/00（3） C01B032/184（3）
C23C016/26（3） C01B032/186（2） C23C014/06（2）
C23C014/34（2） C23C028/00（2） C30B025/18（2）
C30B029/60（2） H01G011/36（2）
发明人
公开年 2016（7）
申请年 2015（3）  2016（3） 
专利权人

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Production of functionalized graphene for lithium-ion batteries involves milling crystalline graphite in the presence of electrolyte solution to produce thinned intermediate material, combining with other electrolyte solution, and milling.

BOZALINA M, PERRET P, NAZARPOUR S, NAZARPOUR S S N

Method for manufacturing single-crystal graphene sheet, involves heat treating catalyst layer and carbonaceous material in one of inert atmosphere and reducing atmosphere to form single-crystal graphene sheet.

CHOI J, SHIN H, YOON S, HAN J

Preparation of graphene, involves mixing inorganic salt with phthalocyanine material uniformly, splitting and separating under protecting gas to obtain highly plane oriented graphene material.

SUN X, WANG Y, DONG G

Synthesis of graphene derivatives and functional materials used in e.g. transistors, sensors, actuators, pharmaceutical, information displays and semiconductor comprises forming refluxed solution of starting material and additive.

TANIMOLA O W