国家/地区 中国（4）
IPC部 H（4）
IPC大类 H10（4） H01（3）
IPC小类 H10K（4） H01L（3）
IPC H10K071/00（4） H01L051/56（2） H10K050/16（2）
发明人 MO X（4）
公开年 2023（4）
申请年 2022（4）
专利权人 TCL TECHNOLO.（4）

Processing of photoelectric device e.g. quantum dot LED, involves providing film layer of photoelectric device, and processing surface of film layer with liquid carbon dioxide and/or solid carbon dioxide.

AO Z, ZHANG J, YAN Y, HONG J, YANG F, MO X

Processing of thin film used for manufacturing LED, involves providing electron transport film layer using metal oxide as electron transport material, and annealing electron transport film layer with pulsed light in protective gas environment.

MO X, ZHANG J, YAN Y, AO Z, YANG F, MA S

Electroluminescent device used for photoelectric device, comprises electrodes, and functional layer including at least two layers which are doped with photocrosslinking agent, and arranged adjacent to each other, in which one layer of at least two layers is light-emitting layer.

AO Z, YAN Y, HONG J, YANG F, MO X, MA S

Manufacture of light-emitting device used for display device, involves providing functional layer(s) on electrode, providing electrode on functional layers obtained by performing thermal annealing treatment on solution of corresponding functional layer material.

AO Z, ZHANG J, YAN Y, HONG J, YANG F, MO X