国家/地区 世界知识产权组织（61）
IPC部 C（61）
IPC大类 C01（61） H01（37） B82（34）
C23（16） B32（14） B01（10）
B05（7） C30（4） C03（3）
C04（3） C08（3） C09（3）
C25（3） A24（2） B44（2）
IPC小类 C01B（61）
IPC C01B031/02（43） C01B031/04（43） B82Y040/00（28）
B82Y030/00（27） C23C016/26（11） C01B031/00（9）
H01B001/04（9） B32B009/00（8） B82B003/00（7）
H01G011/36（7） H01B013/00（6） H01L021/02（6）
H01L029/16（5） H01L051/40（5） C01B032/186（4）
发明人 WON D（3） WON D K（3） YUAN D（3）
AHN J（2） AHN J H（2） BAE S（2）
BAE S K（2） CHO S（2） COLLINS W R（2）
DING G（2） GOODS J B（2） HIURA H（2）
HONG B H（2） JIANG M（2） JUNG M H（2）
公开年 2012（61）
申请年 2011（61）
专利权人 HANWHA TECHW.（4） SAMSUNG TECH.（4） EMPIRE TECHN.（3） NAT INST MAT.（3）
CHINESE ACAD.（2） INT BUSINESS.（2） MASSACHUSETT.（2） NEC CORP（2）
SHANGHAI INS.（2） SONY CORP（2） TOYOTA CHUO .（2） UNIV MEIJO（2）
UNIV RICE WI.（2） UNIV SUNGKYU.（2）

Low pressure shovel for e.g. steam turbine in airplane engine, has blade root connected to shovel blade and closing shovel blade in extension that is in radial alignment regarding axis, where shovel is made of monocrystalline graphene.

HAJE D

Graphene-based steel tubes, pipes or risers used for conveying petroleum, gas and biofuels, and for use in underwater riser systems for deep water with direct application in petroleum industry, comprise aluminum, cobalt, copper and chromium.

CARVALHO A L M D, ZURBA N K, MOREIRA DE CARVALHO A L, MOREIRA D C A L

Preparing graphene used in e.g. LEDs, transistors involves treating graphite with acid to form graphite oxide, mixing with metal oxide nanoparticles; and treating with acid to separate graphene.

CHOI W K, PARK D H, KWON B W, SON D I, CHOI W

Manufacture of graphene for nanoelectronics, involves mixing graphite powder with concentrated sulfuric acid, oxidizing using potassium permanganate, reducing and dispersing.

GUBIN S P, CHEGLAKOV A V, BUSLAEVA E Y, TKACHEV S V, GELLER M M, DUDAKOV V B, BUSLAEVA E YU

Graphene-based storage material, useful in a lithium ion battery, comprises graphene sheets disposed in a vertical stack, where the graphene sheets, within the vertical stack, comprise randomly-distributed defect pores.

KUNG H H, ZHAO X, HAYNER C M, KUNG M C

Preparation of graphene involves reacting graphite with acid solution in presence of oxidizer.

LIU Z, QIN Z, TANG C, ZHOU X

Growing graphene film used as electrodes for optoelectronics applications involves applying carbon source and catalyst to non-catalyst surface, and initiating formation of graphene film from carbon source on the surface.

TOUR J M, YAN Z, PENG Z, SUN Z

Graphene-based electronic apparatus e.g. capacitor, comprises primary electrode containing three-dimensional open-cell graphene structure formed by chemical vapor deposition on metal foam substrate.

YAGER T A

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A