国家/地区 世界知识产权组织（7）
IPC部 B（7）
IPC大类 C01（7） B82（4） B01（3）
H01（3） C23（2）
IPC小类 C01B（7）
IPC C01B031/04（6） B82Y040/00（4） B82B003/00（3）
B82Y030/00（3） C01B031/02（3） B01J003/06（2）
B01J006/00（2） B01J019/10（2） C01B031/06（2）
C01B032/182（2）
发明人 KIM M（7）
公开年 2013（2） 2017（2）
申请年 2012（2）  2016（2） 
专利权人 WISCONSIN AL.（3） ILJIN DIAMON.（2）

Manufacture of three-dimensional mesoporous graphene structure used for e.g. catalyst composition, involves coating mesoporous inorganic template with neutral palladium, plating template with metal, and imprinting inner surface of template.

HA K, LEE W, KIM M, KIM J, LIM J, HA K S

Manufacture of graphene for electronic application, involves sintering metal and graphite powder to produce unreacted graphite, immersing sintered component in strong acid, peeling graphite in mixture and reducing recovered graphene oxide.

OH C, LEE H Y, JANG K I, LEE H W, HAN D Y, KIM M S, CHUL O, HYOONG Y L, KANG I J, HYUN W L, HAN D, KIM M

Manufacture of graphene for electronic application, involves sintering metal and graphite powder to produce component containing unreacted graphite, immersing in strong acid, peeling graphite in mixture and reducing recovered graphene oxide.

OH C, LEE H Y, JANG K I, LEE H W, HAN D Y, KIM M S, CHUL O, HYOONG Y L, KANG I J, HYUN W L, HAN D, KIM M

Production of aqueous dispersion of few-layer graphene nanosheets used for coated article, involves mixing graphite particles with perfluorosulfonate ionomer in aqueous liquid, and arranging ionomer as thin and continuous layer.

JULIUS D, ZIN M, DIVIGALPITIYA R, KORBA G A, KIM M

Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M

Growing patterned single-crystalline graphene comprises depositing a graphene growth barrier that defines a pattern on a substrate surface, and growing graphene on the substrate surface, around the graphene growth barrier.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M

Forming a nano-perforated graphene material, comprises forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material.

ARNOLD M, GOPALAN P, SAFRON N S, KIM M, ARNOLD M S