国家/地区 Usa（6）
关键词 GRAPHENE（4） FIELDEFFECT TRANSIS.（2）
出版物 APPLIED PHYSICS LET.（4） IEEE ELECTRON DEVIC.（2）
出版时间 2011（8）
机构
作者 EDDY CR（8）

Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes

APPLIED PHYSICS LETTERS

KIM BJ, LEE C, JUNG Y, BAIK KH, MASTRO MA, HITE JK, EDDY CR, KIM J

Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology

IEEE ELECTRON DEVICE LETTERS

LIN YM, FARMER DB, JENKINS KA, WU YQ, TEDESCO JL, MYERSWARD RL, EDDY CR, GASKILL DK, DIMITRAKOPOULOS C, AVOURIS P

High temperature measurements of metal contacts on epitaxial graphene

APPLIED PHYSICS LETTERS

NAGAREDDY VK, NIKITINA IP, GASKILL DK, TEDESCO JL, MYERSWARD RL, EDDY CR, GOSS JP, WRIGHT NG, HORSFALL AB

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

APPLIED PHYSICS LETTERS

PULS CP, STALEY NE, MOON JS, ROBINSON JA, CAMPBELL PM, TEDESCO JL, MYERSWARD RL, EDDY CR, GASKILL DK, LIU Y

Epitaxial graphene surface preparation for atomic layer deposition of Al2O3

JOURNAL OF APPLIED PHYSICS

GARCES NY, WHEELER VD, HITE JK, JERNIGAN GG, TEDESCO JL, NEPAL N, EDDY CR, GASKILL DK

Kelvin probe microscopy and electronic transport in graphene on SiC(0001) in the minimum conductivity regime

APPLIED PHYSICS LETTERS

CURTIN AE, FUHRER MS, TEDESCO JL, MYERSWARD RL, EDDY CR, GASKILL DK

Low-Phase-Noise Graphene FETs in Ambipolar RF Applications

IEEE ELECTRON DEVICE LETTERS

MOON JS, CURTIS D, ZEHNDER D, KIM S, GASKILL DK, JERNIGAN GG, MYERSWARD RL, EDDY CR, CAMPBELL PM, LEE KM, ASBECK P

Epitaxial Graphene Nucleation on C-Face Silicon Carbide

NANO LETTERS

HITE JK, TWIGG ME, TEDESCO JL, FRIEDMAN AL, MYERSWARD RL, EDDY CR, GASKILL DK