国家/地区 Japan（9）
关键词 HELIUM ION BEAM MIL.（2）
出版物 CARBON（2） NANOSCALE（2）
出版时间 2019（3） 2017（2） 2018（2）
机构 JAPAN ADV IN.（9）
作者 SCHMIDT ME（11）

Dielectric-Screening Reduction-Induced Large Transport Gap in Suspended Sub-10 nm Graphene Nanoribbon Functional Devices

SMALL

SCHMIDT ME, MURUGANATHAN M, KANZAKI T, IWASAKI T, HAMMAM AMM, SUZUKI S, OGAWA S, MIZUTA H

Stacking of nanocrystalline graphene for nano-electro-mechanical (NEM) actuator applications

MICROSYSTEM TECHNOLOGIESMICROAND NANOSYSTEMSINFORMATION STORAGE PROCESSING SYSTEMS

JOTHIRAMALINGAM K, SCHMIDT ME, MANOHARAN M, HAMMAM AMM, MIZUTA H

Sub-thermal switching of ultra-narrow graphene nanoribbon tunnel field effect transistors

SUPERLATTICES MICROSTRUCTURES

SUZUKI S, SCHMIDT ME, MURUGANATHAN M, HAMMAM AMM, IWASAKI T, MIZUTA H

Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling

ACS APPLIED MATERIALS INTERFACES

SCHMIDT ME, IWASAKI T, MURUGANATHAN M, HAQUE M, VAN NGOC H, OGAWA S, MIZUTA H

Sub-10 nm graphene nano-ribbon tunnel field-effect transistor

CARBON

HAMAM AMM, SCHMIDT ME, MURUGANATHAN M, SUZUKI S, MIZUTA H

Metal-free plasma-enhanced chemical vapor deposition of large area nanocrystalline graphene

MATERIALS RESEARCH EXPRESS

SCHMIDT ME, XU CG, COOKE M, MIZUTA H, CHONG HMH

Focused ion beam milling of exfoliated graphene for prototyping of electronic devices

MICROELECTRONIC ENGINEERING

SCHMIDT ME, JOHARI Z, ISMAIL R, MIZUTA H, CHONG HMH

Sharp switching behaviour in graphene nanoribbon p-n junction

CARBON

HAMMAM AMM, SCHMIDT ME, MURUGANATHAN M, MIZUTA H

Partial hydrogenation induced interaction in a graphene-SiO2 interface: irreversible modulation of device characteristics

NANOSCALE

IWASAKI T, MURUGANATHAN M, SCHMIDT ME, MIZUTA H

Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates

NANOSCALE

SUN J, SCHMIDT ME, MURUGANATHAN M, CHONG HMH, MIZUTA H