国家/地区 Usa（11） Korea（2）
关键词
出版物 APPLIED PHYSICS LET.（3） CARBON（2） JOURNAL OF PHYSICSC.（2）
出版时间 2012（6） 2011（4） 2013（2）
机构 UNIV FLORIDA（9）
作者 TONGAY S（15）

Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene

ACS OMEGA

MERCADO E, ZHOU Y, XIE Y, ZHAO QH, CAI H, CHEN B, JIE WQ, TONGAY S, WANG T, KUBALL M

Scalable enhancement of graphene oxide properties by thermally driven phase transformation

NATURE CHEMISTRY

KUMAR PV, BARDHAN NM, TONGAY S, WU JQ, BELCHER AM, GROSSMAN JC

Work function engineering of single layer graphene by irradiation-induced defects

APPLIED PHYSICS LETTERS

KIM JH, HWANG JH, SUH J, TONGAY S, KWON S, HWANG CC, WU JQ, PARK JY

Stable p- and n-type doping of few-layer graphene/graphite

CARBON

MENG XQ, TONGAY S, KANG J, CHEN ZH, WU FM, LI SS, XIA JB, LI JB, WU JQ

Strain-induced suppression of weak localization in CVD-grown graphene

JOURNAL OF PHYSICSCONDENSED MATTER

MIAO XC, TONGAY S, HEBARD AF

Improved Transfer of Graphene for Gated Schottky-Junction, Vertical, Organic, Field-Effect Transistors

ACS NANO

LEMAITRE MG, DONOGHUE EP, MCCARTHY MA, LIU B, TONGAY S, GILA B, KUMAR P, SINGH RK, APPLETON BR, RINZLER AG

Current transport across the pentacene/CVD-grown graphene interface for diode applications

JOURNAL OF PHYSICSCONDENSED MATTER

BERKE K, TONGAY S, MCCARTHY MA, RINZLER AG, APPLETON BR, HEBARD AF

High Efficiency Graphene Solar Cells by Chemical Doping

NANO LETTERS

MIAO XC, TONGAY S, PETTERSON MK, BERKE K, RINZLER AG, APPLETON BR, HEBARD AF

Drawing graphene nanoribbons on SiC by ion implantation

APPLIED PHYSICS LETTERS

TONGAY S, LEMAITRE M, FRIDMANN J, HEBARD AF, GILA BP, APPLETON BR

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

PHYSICAL REVIEW X

TONGAY S, LEMAITRE M, MIAO X, GILA B, APPLETON BR, HEBARD AF