国家/地区 Usa（5）
关键词 EPITAXIAL GRAPHENE（8）
出版物 CARBON（2）
出版时间 2018（3） 2021（2）
机构 NIST（3） NATL INST ST.（2）
作者 ELMQUIST RE（8）

Comparison Between Graphene and GaAs Quantized Hall Devices With a Dual Probe

IEEE TRANSACTIONS ON INSTRUMENTATION MEASUREMENT

PAYAGALA SU, RIGOSI AF, PANNA AR, POLLAROLO A, KRUSKOPF M, SCHLAMMINGER S, JARRETT DG, BROWN R, ELMQUIST RE, BROWN D, NEWELL DB

Magnetoresistance of Ultralow-Hole-Density Monolayer Epitaxial Graphene Grown on SiC

MATERIALS

CHUANG CS, LIU CW, YANG YF, SYONG WR, LIANG CT, ELMQUIST RE

Epitaxial graphene for quantum resistance metrology

METROLOGIA

KRUSKOPF M, ELMQUIST RE

Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation

MICROELECTRONIC ENGINEERING

RIGOSI AF, LIU CI, WU BY, LEE HY, KRUSKOPF M, YANG YF, HILL HM, HU JN, BITTLE EG, OBRZUT J, WALKER ARH, ELMQUIST RE, NEWELL DB

Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene

2D MATERIALS

RIGOSI AF, HILL HM, GLAVIN NR, POOKPANRATANA SJ, YANG YF, BOOSALIS AG, HU JN, RICE A, ALLERMAN AA, NGUYEN NV, HACKER CA, ELMQUIST RE, WALKER ARH, NEWELL DB

Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices

CARBON

YANG YF, CHENG GJ, MENDE P, CALIZO IG, FEENSTRA RM, CHUANG C, LIU CW, LIU CI, JONES GR, WALKER ARH, ELMQUIST RE

Graphene Quantum Hall Effect Devices for AC and DC Electrical Metrology

IEEE TRANSACTIONS ON ELECTRON DEVICES

KRUSKOPF M, BAUER S, PIMSUT Y, CHATTERJEE A, PATEL DK, RIGOSI AF, ELMQUIST RE, PIERZ K, PESEL E, GOTZ M, SCHURR J

Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC

CARBON

RATHORE S, PATEL DK, THAKUR MK, HAIDER G, KALBAC M, KRUSKOPF M, LIU CE, RIGOSI AF, ELMQUIST RE, LIANG CT, HONG PD