国家/地区
关键词 MOBILITY（9）
出版物
出版时间 2019（9）
机构
作者

High quality hydrogen silsesquioxane encapsulated graphene devices with edge contacts

MATERIALS LETTERS

LI PL, COLLOMB D, BENDING S

Demonstrating the concepts of sheet resistance, field effect, and mobility of a semiconductor using graphene field effect transistors

EUROPEAN JOURNAL OF PHYSICS

STECHER K, HUANG SHY, ESCORCIO R, LUICANMAYER A

Opening of Band Gap of Graphene with High Electronic Mobility by Codoping BN Pairs

CHEMICAL RESEARCH IN CHINESE UNIVERSITIES

REN XY, XIA S, ZHANG ZG, MENG X, YU HM, WU Q, ZHANG WY, LI AW, YANG H

The evolution of surface cleanness and electronic properties of graphene field-effect transistors during mechanical cleaning with atomic force microscopy

NANOTECHNOLOGY

PARK DH, CHO YJ, LEE JH, CHOI I, JHANG SH, CHUNG HJ

Intrinsic transport properties of nanoporous graphene highly suitable for complementary field-effect transistors

2D MATERIALS

LI J, DELERUE C

Non-contact mobility measurements of graphene on silicon carbide

MICROELECTRONIC ENGINEERING

WHELAN PR, ZHAO XJ, PASTERNAK I, STRUPINSKI W, JEPSEN PU, BOGGILD P

Percolation Effects in Electrolytically Gated WS2/Graphene Nano:Nano Composites

ACS APPLIED MATERIALS INTERFACES

O SUILLEABHAIN D, VEGAMAYORAL V, KELLY AG, HARVEY A, COLEMAN JN

Effects of post-lithography cleaning on the yield and performance of CVD graphene-based devices

BEILSTEIN JOURNAL OF NANOTECHNOLOGY

DE ARAUJO END, DE SOUSA TASL, GUIMARAES LD, PLENTZ F

Spray-On Liquid-Metal Electrodes for Graphene Field-Effect Transistors

MICROMACHINES

MELCHER JL, ELASSY KS, ORDONEZ RC, HAYASHI C, OHTA AT, GARMIRE D