国家/地区 | Usa(3) China(2) |
关键词 | SEMICONDUCTOR EPITAXIAL LAYER(9) |
出版物 | APPLIED PHYSICS LET.(8) |
出版时间 | 2010(4) 2012(3) 2009(2) |
机构 | |
作者 |
APPLIED PHYSICS LETTERS
MAO JH, HUANG L, PAN Y, GAO M, HE JF, ZHOU HT, GUO HM, TIAN Y, ZOU Q, ZHANG LZ, ZHANG HG, WANG YL, DU SX, ZHOU XJ, CASTRO NETO AH, GAO HJ
APPLIED PHYSICS LETTERS
NOMANI MWK, SHIELDS V, TOMPA G, SBROCKEY N, SPENCER MG, WEBB RA, KOLEY G
APPLIED PHYSICS LETTERS
SINGH RS, NALLA V, CHEN W, JI W, WEE ATS
APPLIED PHYSICS LETTERS
KOPYLOV S, TZALENCHUK A, KUBATKIN S, FAL KO VI
APPLIED PHYSICS LETTERS
AUFRAY B, KARA A, VIZZINI S, OUGHADDOU H, LEANDRI C, EALET B, LE LAY G
APPLIED PHYSICS LETTERS
HARRISON SE, CAPANO MA, REIFENBERGER R
APPLIED PHYSICS LETTERS
KRUPKA J, STRUPINSKI W
APPLIED PHYSICS LETTERS
WU XS, HU YK, RUAN M, MADIOMANANA NK, HANKINSON J, SPRINKLE M, BERGER C, DE HEER WA
PHYSICAL REVIEW B
GUO YF, GUO WL, CHEN CF