国家/地区 Brazil（14）
关键词 GRAPHENE（7） RAMAN SPECTROSCOPY（4） DEFECT（3）
GRAPHENE OXIDE（3） HUMMERS METHOD（2） ION BOMBARDMENT（2）
出版物 NANO LETTERS（3） CARBON（2）
出版时间 2010（4） 2011（2） 2012（2）
机构 UNIV FED MIN.（7） INST NACL ME.（2）
作者 FERREIRA EHM（14）

Revealing lattice disorder, oxygen incorporation and pore formation in laser induced two-photon oxidized graphene

CARBON

MENDOZA ME, FERREIRA EHM, KUZNETSOV A, ACHETE CA, AUMANEN J, MYLLYPERKIO P, JOHANSSON A, PETTERSSON M, ARCHANJO BS

Electrochemical Response of Glassy Carbon Electrodes Modified using Graphene Sheets of Different Sizes

INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE

CASTRO KLS, OLIVEIRA SM, CURTI RV, ARAUJO JR, SASSI LM, ALMEIDA CM, FERREIRA EHM, ARCHANJO BS, CABRAL MF, KUZNETSOV A, SENA LA, ACHETE CA, D ELIA E

Quantifying defects in N-layer graphene via a phenomenological model of Raman spectroscopy

NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION BBEAM INTERACTIONS WITH MATERIALS ATOMS

GIRO R, ARCHANJO BS, FERREIRA EHM, CAPAZ RB, JORIO A, ACHETE CA

The use of a Ga+ focused ion beam to modify graphene for device applications

NANOTECHNOLOGY

ARCHANJO BS, BARBOZA APM, NEVES BRA, MALARD LM, FERREIRA EHM, BRANT JC, ALVES ES, PLENTZ F, CAROZO V, FRAGNEAUD B, MACIEL IO, ALMEIDA CM, JORIO A, ACHETE CA

Dynamic Negative Compressibility of Few-Layer Graphene, h-BN, and MoS2

NANO LETTERS

BARBOZA APM, CHACHAM H, OLIVEIRA CK, FERNANDES TFD, FERREIRA EHM, ARCHANJO BS, BATISTA RJC, DE OLIVEIRA AB, NEVES BRA

Raman Signature of Graphene Superlattices

NANO LETTERS

CAROZO V, ALMEIDA CM, FERREIRA EHM, CANCADO LG, ACHETE CA, JORIO A

Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies

NANO LETTERS

CANCADO LG, JORIO A, FERREIRA EHM, STAVALE F, ACHETE CA, CAPAZ RB, MOUTINHO MVO, LOMBARDO A, KULMALA TS, FERRARI AC

Measuring disorder in graphene with the G and D bands

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

JORIO A, FERREIRA EHM, MOUTINHO MVO, STAVALE F, ACHETE CA, CAPAZ RB

Evolution of the Raman spectra from single-, few-, and many-layer graphene with increasing disorder

PHYSICAL REVIEW B

FERREIRA EHM, MOUTINHO MVO, STAVALE F, LUCCHESE MM, CAPAZ RB, ACHETE CA, JORIO A

Raman study of ion-induced defects in N-layer graphene

JOURNAL OF PHYSICSCONDENSED MATTER

JORIO A, LUCCHESE MM, STAVALE F, FERREIRA EHM, MOUTINHO MVO, CAPAZ RB, ACHETE CA