国家/地区 Japan（9）
关键词
出版物 APPLIED PHYSICS LET.（4） JAPANESE JOURNAL OF.（2） JOURNAL OF APPLIED .（2）
出版时间 2013（3） 2010（2） 2011（2）
机构 UNIV TOKYO（9）
作者 TORIUMI A（9）

Large Fermi energy modulation in graphene transistors with high-pressure O-2-annealed Y2O3 topgate insulators

APPLIED PHYSICS LETTERS

KANAYAMA K, NAGASHIO K, NISHIMURA T, TORIUMI A

The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity

APPLIED PHYSICS LETTERS

IFUKU R, NAGASHIO K, NISHIMURA T, TORIUMI A

Carrier density modulation in graphene underneath Ni electrode

JOURNAL OF APPLIED PHYSICS

MORIYAMA T, NAGASHIO K, NISHIMURA T, TORIUMI A

Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement

APPLIED PHYSICS LETTERS

NAGASHIO K, NISHIMURA T, TORIUMI A

Electrical transport properties of graphene on SiO2 with specific surface structures

JOURNAL OF APPLIED PHYSICS

NAGASHIO K, YAMASHITA T, NISHIMURA T, KITA K, TORIUMI A

Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors

JAPANESE JOURNAL OF APPLIED PHYSICS

NAGASHIO K, TORIUMI A

Contact resistivity and current flow path at metal/graphene contact

APPLIED PHYSICS LETTERS

NAGASHIO K, NISHIMURA T, KITA K, TORIUMI A

Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor

JAPANESE JOURNAL OF APPLIED PHYSICS

NAGASHIO K, NISHIMURA T, KITA K, TORIUMI A

Mobility Variations in Mono- and Multi-Layer Graphene Films

APPLIED PHYSICS EXPRESS

NAGASHIO K, NISHIMURA T, KITA K, TORIUMI A