国家/地区 Usa（8）
关键词 GRAPHENE（2）
出版物 APPLIED PHYSICS LETTERS（8）
出版时间 2013（3） 2010（2）
机构 UNIV TEXAS DALLAS（8）
作者 WALLACE RM（5） COLOMBO L（4） VOGEL EM（4） KIM J（3）
KIM MJ（3） MORDI G（3） CHABAL YJ（2） FISCHETTI MV（2）
JANDHYALA S（2） MCDONNELL S（2） VENUGOPAL A（2）

Interfacial graphene growth in the Ni/SiO2 system using pulsed laser deposition

APPLIED PHYSICS LETTERS

HEMANI GK, VANDENBERGHE WG, BRENNAN B, CHABAL YJ, WALKER AV, WALLACE RM, QUEVEDOLOPEZ M, FISCHETTI MV

Graphene-ferroelectric hybrid devices for multi-valued memory system

APPLIED PHYSICS LETTERS

JANDHYALA S, MORDI G, MAO D, HA MW, QUEVEDOLOPEZ MA, GNADE BE, KIM J

Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene

APPLIED PHYSICS LETTERS

ONG ZY, FISCHETTI MV

Low-kappa organic layer as a top gate dielectric for graphene field effect transistors

APPLIED PHYSICS LETTERS

MORDI G, JANDHYALA S, FLORESCA C, MCDONNELL S, KIM MJ, WALLACE RM, COLOMBO L, KIM J

The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2

APPLIED PHYSICS LETTERS

PIRKLE A, CHAN J, VENUGOPAL A, HINOJOS D, MAGNUSON CW, MCDONNELL S, COLOMBO L, VOGEL EM, RUOFF RS, WALLACE RM

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

APPLIED PHYSICS LETTERS

LEE B, MORDI G, KIM MJ, CHABAL YJ, VOGEL EM, WALLACE RM, CHO KJ, COLOMBO L, KIM J

Contact resistance in few and multilayer graphene devices

APPLIED PHYSICS LETTERS

VENUGOPAL A, COLOMBO L, VOGEL EM

Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

APPLIED PHYSICS LETTERS

LEE BK, PARK SY, KIM HC, CHO K, VOGEL EM, KIM MJ, WALLACE RM, KIM JY