国家/地区 Usa（13）
关键词
出版物 APPLIED PHYSICS LETTERS（13）
出版时间 2012（4） 2011（3） 2013（2） 2014（2） 2016（2）
机构 UNIV TEXAS A.（12）
作者 AKINWANDE D（13）

Improvement of graphene field-effect transistors by hexamethyldisilazane surface treatment

APPLIED PHYSICS LETTERS

CHOWDHURY SF, SONDE S, RAHIMI S, TAO L, BANERJEE S, AKINWANDE D

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

APPLIED PHYSICS LETTERS

RAMON ME, MOVVA HCP, CHOWDHURY SF, PARRISH KN, RAI A, MAGNUSON CW, RUOFF RS, AKINWANDE D, BANERJEE SK

Inductively heated synthesized graphene with record transistor mobility on oxidized silicon substrates at room temperature

APPLIED PHYSICS LETTERS

TAO L, LEE J, LI HF, PINER RD, RUOFF RS, AKINWANDE D

"Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers" (vol 99, 223512, 2011)

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Multi-finger flexible graphene field effect transistors with high bendability

APPLIED PHYSICS LETTERS

LEE J, TAO L, PARRISH KN, HAO YF, RUOFF RS, AKINWANDE D

An exactly solvable model for the graphene transistor in the quantum capacitance limit

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Hybrid graphene/organic semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

HA TJ, AKINWANDE D, DODABALAPUR A

Embedded-gate graphene transistors for high-mobility detachable flexible nanoelectronics

APPLIED PHYSICS LETTERS

LEE J, TAO L, HAO YF, RUOFF RS, AKINWANDE D

Impact of contact resistance on the transconductance and linearity of graphene transistors (vol 98, 183505, 2011)

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D

Even-odd symmetry and the conversion efficiency of ideal and practical graphene transistor frequency multipliers

APPLIED PHYSICS LETTERS

PARRISH KN, AKINWANDE D