国家/地区 Usa（4） Singapore（2）
关键词 NANOELECTRONIC（11）
出版物 APPLIED PHYSICS LETTERS（11）
出版时间 2009（5） 2010（5）
机构
作者

Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors

APPLIED PHYSICS LETTERS

BAEK DJ, SEOL ML, CHOI SJ, MOON DI, CHOI YK

Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate

APPLIED PHYSICS LETTERS

BRANT JC, LEON J, BARBOSA TC, ARAUJO END, ARCHANJO BS, PLENTZ F, ALVES ES

Valley filter in strain engineered graphene

APPLIED PHYSICS LETTERS

FUJITA T, JALIL MBA, TAN SG

Model of tunneling transistors based on graphene on SiC

APPLIED PHYSICS LETTERS

MICHETTI P, CHELI M, IANNACCONE G

Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

APPLIED PHYSICS LETTERS

WANG HM, ZHENG Z, WANG YY, QIU JJ, GUO ZB, SHEN ZX, YU T

Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors

APPLIED PHYSICS LETTERS

YOON Y, SALAHUDDIN S

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

APPLIED PHYSICS LETTERS

LUISIER M, KLIMECK G

Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

APPLIED PHYSICS LETTERS

TSENG F, UNLUER D, HOLCOMB K, STAN MR, GHOSH AW

Graphene nanoribbon as a negative differential resistance device

APPLIED PHYSICS LETTERS

REN H, LI QX, LUO Y, YANG JL

Multilayer friction and attachment effects on energy dissipation in graphene nanoresonators

APPLIED PHYSICS LETTERS

KIM SY, PARK HS