国家/地区 JP（5）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L029/786（4） H01L051/05（2） H01L051/30（2）
发明人 HARADA N（3）
公开年 2009（4）
申请年 2008（5）
专利权人 FUJITSU LTD（5）

Bipolar FET e.g. e.g. bipolar graphene channel FET used in semiconductor integrated circuit device e.g. common-source circuit, has voltage application device which changes polarity of transistor, from direction of gate electrode.

HARADA N

Semiconductor device e.g. transistor has channel formed of bi-layer graphene film.

HARADA N, OFUCHI M

Method for processing graphene sheet type-material used for semiconductor integrated circuit device, involves irradiating vacuum UV rays to surface of graphene sheet-type material to remove or modify outermost surface layer of material.

ASANO T

Graphene transistor e.g. graphene FET for electronic device, has carbon film whose width of side near source electrode of channel region is wider than width of carbon film of side near drain electrode of channel region.

HARADA N

Manufacturing method of semiconductor device e.g. transistor, involves forming crystal film pattern on substrate and making graphene sheet grow from catalyst film pattern.

AWANO Y