国家/地区 韩国（5） 美国（2）
IPC部 H（6）
IPC大类 H01（6）
IPC小类 H01L（5）
IPC H01L033/04（2） H01L033/16（2） H01L033/20（2）
H01L033/26（2）
发明人 HWANG S W（4） CHA N G（3） CHUNG H J（3）
SONE C S（3）
公开年 2012（6）
申请年 2010（6）
专利权人 SAMSUNG ELECTRONICS CO LTD（6）

Graphene electronic component e.g. radio frequency (RF) transistor, has gate electrode that is arranged on protective layer which is formed identical to shape of graphene channel layer between source electrode and drain electrode.

CHUNG H J, HEO J S, YANG H J, SEO S A, LEE S H, CHUNG H, HEO J, YANG H, SEO S, LEE S

Graphene light emitting device, has multi-layer structure equipped with graphene that is prepared on substrate, insulating layer prepared on quantum dots that are formed on grapheme, and N type electrode prepared on substrate.

KIM J S, HWANG S W, CHA N G, PARK S E, SUNG Y K, SONE C S

Lamination structure of light emitting device, has graphene layer that is provided to cover quantum dot on base layer.

CHA N G, HWANG S W, CHUNG H J, SONE C S

Quantum dot light emitting device, has hole-transport layer formed on quantum dot light-emitting layer, and graphene layer made of multiple graphene sheets, where quantum dot is formed within multiple nano holes.

CHA N G, HWANG S W, CHUNG H J, SONE C S

Graphene light emitting device has surface plasmon layer that is formed on substrate and conductivity type graphene layer that is formed on surface plasmon layer.

KO H D, HWANG S W

Nano graphene-enhanced particulate formed of a single or many graphene sheets and many fine anode active material particles (e.g. tin oxide or cobalt oxide), useful as a lithium-ion battery anode active material.

ZHAMU A, SHI J, CHEN G, FANG Q, JANG B Z