国家/地区 中国（8）
IPC部 C（8）
IPC大类 C23（8） C01（4） B82（3）
IPC小类 C23C（8） C01B（4） B82Y（3）
IPC C23C016/44（8）
发明人
公开年 2013（5） 2012（3）
申请年 2012（8）
专利权人

Normal pressure chemical vapor deposition of high quality dual layer graphene thin film comprises pre-processing copper foil by using ethanol and acetone ultrasonic cleaning, introducing acetylene gas, and cooling.

LI W, QI M, REN Z, WANG H

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Membrane used to separate gas from fluid mixture including first gas e.g. neon and second gas, includes graphene layer perforated by nanoscale pores, and gas sorbent to contact surface of layer and direct gas adsorbed at sorbent into pores.

DUERKSEN G L, MILLER S A

Composite graphene nano-sheet used in coating silicon nano-cone for corner crimping machine comprises surface with silicon nano-cone array substrate forming nano-layer of graphene on surface of silicon cone array.

TIAN S, LI J, GU C, LI L, SUN W, XIA X

Preparation of side gating graphene field-effect transistor structure involves placing copper foil in reaction chamber, vacuumizing reaction chamber, performing thermal annealing on copper foil, and growing graphene.

WANG D, HAN D, ZHANG J, HAO Y, CHAI Z, NING J, YAN Y

Device for manufacturing two-dimensional nanometer film e.g. graphene film, has balance chamber, processing chamber and discharging chamber which are respectively connected with independent vacuumizing device.

HUANG W, XU M, ZHONG M

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S

Preparing nitrogen-doped graphene useful for preparing electrical devices, comprises heating a catalyst under non-oxidizing atmosphere, inletting carbon and nitrogen source in the reactor to react, and processing chemical vapor deposition.

CHEN J, GENG D, HUANG L, LIU Y, WU B, XUE Y, YU G