国家/地区 韩国（8） 美国（3） 日本（2）
IPC部 B（8）
IPC大类 C01（8） H01（4） B01（3）
B32（3） B82（3）
IPC小类 C01B（8）
IPC C01B031/02（8）
发明人 LEE S（8）
公开年 2013（5） 2012（2）
申请年 2012（8）
专利权人 LG ELECTRONI.（5）

Manufacturing graphene oxide, comprises preparing a dispersion of graphite oxide, removing the graphite oxide from the dispersion of graphite oxide, and then performing an oxidation of graphite oxide to graphene.

BYUN N, LEE D, LEE S

Manufacture of nanopattern-containing graphene involves forming nanobead layer on oxide graphene layer, separating gap between nanobeads, forming metallic layer on oxide graphene layer, and forming nanopattern by etching graphene layer.

BYUN N, LEE D, LEE S, SEO B

Manufacture of graphene powder involves drying graphene oxide solution, and reducing obtained graphene oxide powder using vaporized reducing agent.

LEE D, LEE S, SEO B, BYUN N

Manufacture of graphene oxide powder involves spraying graphene oxide solution and drying sprayed solution.

LEE D, LEE S, SEO B, BYUN N

Producing a doped graphene, used in e.g. auxiliary electrode, comprises forming doped graphene layer, positioning support layer, removing metal layer, adding dopants and positioning substrate layer and then removing support layer.

RHO J, LEE S, JUNG M, MOON J, SEO B, PARK W

Graphene paper, useful in e.g. a thin-film electrode, comprises a reduced graphene oxide layer, and a coating layer formed by coating the reduced graphene oxide layer with a polymer comprising substituted ethyl-benzene compounds.

LEE W, LEE J U, YI J, LEE S, BYUN J, KIM B, YI J W, LEE S B, BYUN, KIM B S, BOK L S, HYEONG B J, O L W, SEON K B, UK L J, U LEE J, BYUN J H

Ferromagnetic graphene for spin valve device, comprises ferromagnetic graphene having ferromagnetic characteristics and antidote(s) in ferromagnetic graphene.

LEE S, LEE S H

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H